发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce the number of manufacturing processes of a semiconductor device; and improve yield of the semiconductor device; and reduce manufacturing cost of the semiconductor device.SOLUTION: A semiconductor device comprises on a substrate: a first transistor which has a single crystal semiconductor layer in a channel formation region; a second transistor which is isolated from the first transistor via an insulation layer and has an oxide semiconductor layer in a channel formation region; and a diode which has the single crystal semiconductor layer and the oxide semiconductor layer. And provided is a manufacturing method of the semiconductor device.
申请公布号 JP2015111723(A) 申请公布日期 2015.06.18
申请号 JP20150025445 申请日期 2015.02.12
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 KAMATA KOICHIRO;ITO YOSHIAKI;OUMARU TAKUO
分类号 H01L21/8234;H01L21/28;H01L21/336;H01L21/8238;H01L27/06;H01L27/08;H01L27/088;H01L27/092;H01L29/786 主分类号 H01L21/8234
代理机构 代理人
主权项
地址