CONDUCTOR STRUCTURE AND METHOD

摘要

A method of forming an interlayer conductor structure. The method includes forming a stack of semiconductor pads coupled to respective active layers for a circuit. The semiconductor pads include outside perimeters each having one side coupled to a respective active layer. Impurities are implanted along the outside perimeters to form outside lower resistance regions on the pads. Openings are then formed in the stack of the semiconductor pads to expose a landing area for interlayer conductors on a corresponding semiconductor pad and to define an inside perimeter on at least one of the semiconductor pads. Inside lower resistance regions are formed along the inside perimeters by implanting impurities for interlayer conductor contacts and configured to overlap and be continuous with the corresponding outside lower resistance region.

主权项

1. A device, comprising:
a circuit including a plurality of active layers; a stack of semiconductor pads coupled to respective active layers in the plurality of active layers; the semiconductor pads having outside perimeter lower resistance regions along outside perimeters of the semiconductor pads; openings in the stack of semiconductor pads, each opening defining an inside perimeter on at least one of the semiconductor pads; the semiconductor pads having inside perimeter lower resistance regions along the inside perimeters; and the semiconductor pads having interior regions each including at least one side coupled to the outside perimeter lower resistance region and another side coupled to the inside perimeter lower resistance region, wherein the interior regions have higher resistance relative to the inside perimeter lower resistance regions and the outside perimeter lower resistance regions.