| 发明名称 |
FIN ISOLATION IN MULTI-GATE FIELD EFFECT TRANSISTORS |
| 摘要 |
A method for fabricating a field effect transistor (FET) device includes forming a plurality of semiconductor fins on a substrate, removing a semiconductor fin of the plurality of semiconductor fins from a portion of the substrate, forming an isolation fin that includes a dielectric material on the substrate on the portion of the substrate, and forming a gate stack over the plurality of semiconductor fins and the isolation fin. |
| 申请公布号 |
US2015171164(A1) |
申请公布日期 |
2015.06.18 |
| 申请号 |
US201514613781 |
申请日期 |
2015.02.04 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Cheng Kangguo;Haran Balasubramanian S.;Khakifirooz Ali;Ponoth Shom;Standaert Theodorus E.;Yamashita Tenko |
| 分类号 |
H01L29/06;H01L29/78 |
主分类号 |
H01L29/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A field effect transistor (FET) device, comprising:
a plurality of semiconductor fins on a substrate; at least one semiconductor fin of the plurality of semiconductor fins completely removed from a portion of the substrate; an isolation fin that includes a dielectric material on the portion of the substrate; and a gate stack over the plurality of semiconductor fins and the isolation fin. |
| 地址 |
Armonk NY US |
