APPARATUS AND METHOD FOR FILM FORMATION

摘要

An apparatus and method for forming a thin film on a substrate by RPCVD which provides for very low levels of carbon and oxygen impurities and includes the steps of introducing a Group VA plasma into a first deposition zone of a growth chamber, introducing a Group IIIA reagent into a second deposition zone of the growth chamber which is separate from the first deposition zone and introducing an amount of an additional reagent selected from the group consisting of ammonia, hydrazine, di-methyl hydrazine and a hydrogen plasma through an additional reagent inlet into the second deposition zone such that the additional reagent and the Group IIIA reagent mix prior to deposition.

主权项

1. An RPCVD apparatus for forming a film, the apparatus including a growth chamber comprising:
(a) a Group VA plasma inlet located in a first deposition zone of the growth chamber to introduce a Group VA plasma thereto; (b) a Group IIIA reagent inlet located in a second deposition zone of the growth chamber to introduce a Group IIIA reagent thereto; (c) an additional reagent inlet adjacent the Group IIIA reagent inlet to introduce an additional reagent selected from the group consisting of ammonia, hydrazine, di-methyl hydrazine and hydrogen plasma into the second deposition zone such that the additional reagent and Group IIIA reagent mix prior to deposition; and (d) a substrate holder adapted to support one or more substrates and rotate each substrate between the first and second deposition zones.