LINER ION BEAM BONDING APPARATUS AND ARRAY STRUCTURE THEREOF

摘要

A linear ion beam bonding apparatus and an array structure thereof, comprising a pair of primary radiofrequency electrodes (501 and 502) extending along the axial direction and oppositely arranged on two sides of the central axis of the linear ion beam bonding apparatus. Section patterns on different section planes of each of the primary radiofrequency electrodes (501 and 502) and perpendicular to the central axis are all kept symmetric via a primary symmetric plane (506) of the central axis. Radiofrequency voltages attached to the primary radiofrequency electrodes (501 and 502) are of identical phases. An ion extraction groove (84) is arranged on at least one of the primary radiofrequency electrodes (501 and 502), while at least one pair of auxiliary electrodes (503 and 505) are arranged on two sides of the pair of primary radiofrequency electrodes (501 and 502). The auxiliary electrodes (503 and 505) are arranged in duality to the primary symmetric plane (506). At least one of the auxiliary electrodes (503 and 505) is provided with a finite number of symmetric planes (507), while a minimal angle greater than 0 degrees and less than 90 degrees is provided between each symmetric plane (507) and the symmetric plane (506) of the primary radiofrequency electrodes (501 and 502). By means of this, a quadrupole field component of an ion beam bonding radiofrequency electric field within the ion beam bonding apparatus is strengthened.

主权项

1. A linear ion trapping apparatus, comprising:
a pair of main RF electrodes that are oppositely disposed on two sides of a central axis of the linear ion trapping apparatus and extend along an axial direction, wherein cross section patterns, on all section planes perpendicular to the central axis, of each main RF electrode of the pair of main RF electrodes are symmetrical about a main symmetry plane that passes through the central axis, and phases of RF voltages applied on the pair of main RF electrodes are the same; an ion ejection slot provided on at least one main RF electrode; and at least one auxiliary electrode pair located on two sides of the pair of main RF electrodes and disposed as duals with the main symmetry plane, wherein at least one auxiliary electrode has a finite number of symmetry planes, and a minimum included angle greater than 0 degree and less than 90 degrees exists among all included angles between the symmetry planes and a symmetry plane of the pair of main RF electrodes.