| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which minimizes variation in threshold voltage. <P>SOLUTION: A manufacturing method of a semiconductor device using an SOI substrate comprises: a step of generating a buried oxide film 4b by oxygenating an active layer substrate 5; a step of performing channel doping 10 on a surface of a support substrate 3 for determining a threshold voltage of a MOS transistor 1; a step of bonding the support substrate 3 and the active layer substrate 5 via the buried oxide film; a step of partially removing the active layer substrate to expose a buried oxide film 4a; and a step of forming a gate electrode 6a on the buried oxide film 4a. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
