| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method and a device of forming a polycrystalline silicon film that forms the polycrystalline silicon film with excellent characteristics in a short time, and a substrate having the polycrystalline silicon film formed thereon thereby. <P>SOLUTION: Silicon particulates are produced by heating a silicon evaporation source 15, transported, and jetted into a vacuum chamber 30 while carried with an air current of a supersonic free jet J to be physically vapor-deposited on a substrate 33 arranged in the vacuum chamber 30, thereby forming the polycrystalline silicon film of the silicon particulates. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
