发明名称 半導体セラミックおよび半導体セラミック素子
摘要 <p>Provided is a semiconductor ceramic element constructed by using a semiconductor ceramic that generates metal-insulator transition at a temperature of actual use and has a sufficient strength to enable easy handling. The semiconductor ceramic element has an element main body having a semiconductor ceramic made of a perovskite-type or pyrochlore-type oxide containing a rare earth element, nickel, and titanium, in which a part of the nickel is present as metal nickel; and a pair of electrodes formed to interpose the element main body therebetween. This semiconductor ceramic element shows a sharp resistance change within a temperature range of actual use, and can be used advantageously as a temperature sensor.</p>
申请公布号 JP5737299(B2) 申请公布日期 2015.06.17
申请号 JP20120553723 申请日期 2012.01.17
申请人 发明人
分类号 C04B35/50;H01C7/04 主分类号 C04B35/50
代理机构 代理人
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