发明名称 SEMICONDUCTOR DEVICE
摘要 <p>An optical amplifier has a low polarization dependent gain. The amplifier includes a gain medium including a plurality of adjoining semiconductor layers to provide optical gain wherein the adjoining semiconductor layers define one or more quantum wells for electrons and are operative to provide both direct and indirect electron-hole transitions in the gain medium. A first quantized electron energy level in the conduction band and a first quantized hole energy level in the valence band is located in a first layer. A further first quantized hole energy level in the valence band is located in an adjacent second layer.</p>
申请公布号 EP2526594(B1) 申请公布日期 2015.06.17
申请号 EP20110703928 申请日期 2011.02.11
申请人 THE CENTRE FOR INTEGRATED PHOTONICS LIMITED 发明人 ROBERTSON, MICHAEL;CHEN, XIN;CANNARD, PAUL
分类号 H01S5/50;H01S5/343 主分类号 H01S5/50
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