| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To enhance processing performance of roughening processing for forming a fine unevenness of angstrom order to nano order on a surface of a substrate to be processed containing a silicon containing substance. <P>SOLUTION: A substrate to be processed 9 is disposed at a processing area 29 having a pressure near the atmospheric pressure. A process gas containing a hydrogen fluoride vapor and water vapor is supplied from a supply system 10 to the processing area 29. A temperature difference (T<SB POS="POST">D</SB>-T<SB POS="POST">S</SB>) between a dew point T<SB POS="POST">D</SB>of the processing area 29 and a temperature T<SB POS="POST">S</SB>of the substrate to be processed 9 is so adjusted as to be a predetermined value within a range of about 0°C to 20°C by an adjustment part 3. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
