| 摘要 |
<p>A method is provided for the thermal photoswitching of spin-transition compounds from the low-spin state to the high-spin state, including at least one step of exposing the material to a non-polarized laser beam which is at room temperature, and the wavelength of which is in the infrared range and the power of which is 1 mW·cm−2 to 1 W·cm−2. The method may be used for the temporary or permanent marking of materials including particles of at least one spin-transition compound including an iron(II) and triazole ligand compound.</p> |
