SEMICONDUCTOR DEVICE PRODUCING METHOD

摘要

A first laser pulse emitted from a semiconductor laser oscillator and having a first pulse width is entered onto a second surface of a semiconductor substrate in which a semiconductor device is formed on a first surface and dopants are added to a surface layer portion on the second surface side. A second laser pulse having a second pulse width less than or equal to 1/10 of the first pulse width is entered on an incident area of the first laser pulse in an overlapping manner. The relative positional relationship on a time axis between falling time of the first laser pulse and rising time of the first laser pulse is set such that the temperature of the first surface, which rises due to the incidence of the first laser pulse and the second laser pulse, does not exceed an allowable upper limit value which is predetermined.