发明名称 半導体素子接点
摘要 <p>A method of fabrication of electrical contact structures on a semiconductor material includes depositing an oxide of a desired contact material by a chemical electroless process on a face of the semiconductor material and reducing the oxide via a chemical electroless process to produce a contact of the desired contact material. A method of fabrication of a semiconductor device incorporating such electrical contact structures and a semiconductor device incorporating such electrical contact structures are also described.</p>
申请公布号 JP5735490(B2) 申请公布日期 2015.06.17
申请号 JP20120511350 申请日期 2010.05.18
申请人 发明人
分类号 H01L21/288;H01L21/28;H01L29/47;H01L29/872 主分类号 H01L21/288
代理机构 代理人
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