| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To improve recovery characteristics of a semiconductor device having a diode. <P>SOLUTION: A semiconductor substrate 10 of a semiconductor device 1 includes a p-type anode region 8 contacting an anode electrode E1, and an n-type region 9 contacting the anode electrode E1. The anode region 8 includes a high concentration anode partial region 7 having a high impurity concentration, a low concentration anode partial region 6 having a low impurity concentration, and a medium concentration anode partial region 5 having a medium impurity concentration. The high concentration anode partial region 7, the low concentration anode partial region 6, and the medium concentration anode partial region 5 are arranged in this order when observed in a direction from the anode electrode El toward a cathode electrode E2. The low concentration anode partial region 6 and the n-type region 9 contact each other. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
