| 摘要 |
<p>The method involves attaching a control contact (22a) to a pole of a pre-resistor (14) integrated in a power semiconductor (12). Another pole of the pre-resistor is guided to another control contact (22b) for a power semiconductor. The former control contact and the latter control contact are connected by a bonding wire (16) with a connecting terminal (24a) and another connecting terminal (24b) respectively.</p> |
