| 摘要 |
<p>A semiconductor device comprises a drift layer (3) doped according to a first conductivity type; a drain contact (2) on a first surface of the drift layer (3); a plurality of additional layers of semiconductor material (7, 7') on a second surface of the drift layer (3) opposite the drain contact (2) doped according to a second conductivity type; and a source contact (1). The plurality of additional layers of semiconductor material (7, 7') is arranged to form a plurality of concentric rings of semiconductor material on the second surface of the drift layer (3) such that regions of the second surface of the drift layer (3) between and laterally separating the plurality of concentric rings of semiconductor material form Schottky-contact regions (6). The source contact (1) is in direct contact with the drift layer (3) in the Schottky-contact regions (6).</p> |
