发明名称 LaNiO3 thin film-forming composition and method of forming LaNiO3 thin film using the same
摘要 A LaNiO 3 thin film having extremely few voids is uniformly formed. Provided is a LaNiO 3 thin film-forming composition for forming a LaNiO 3 thin film. It induces: a LaNiO 3 precursor; a first organic solvent; a stabilizer; and a second organic solvent. The first organic solvent includes carboxylic acids, alcohols, esters, ketones, ethers, cycloalkanes, aromatic compounds, or tetrahydrofuran. The stabilizer includes ²-diketones, ²-ketones, ²-keto esters, oxyacids, diols, triols, carboxylic acids, alkanolamines, or polyvalent amines. The second organic solvent has a boiling point of 150°C to 300°C and a surface tension of 20 to 50 dyn/cm. The LaNiO 3 precursor content is I to 20 mass% with respect to 100 mass% of the composition. The stabilizer content is 0 to 10 mol with respect to 1 mol of a total amount of the LaNiO 3 precursors. The second organic solvent content is 5 to 20 mass% with respect to the composition.
申请公布号 EP2767613(A3) 申请公布日期 2015.06.17
申请号 EP20140154100 申请日期 2014.02.06
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 FUJII, JUN;SAKURAI, HIDEAKI;SOYAMA, NOBUYUKI
分类号 C23C18/12;C04B35/01;C04B35/624 主分类号 C23C18/12
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