发明名称 Cascoded semiconductor devices
摘要 <p>The invention provides a cascode transistor circuit with a main power transistor (10) and a cascode MOSFET (12) formed as an integrated circuit, packaged to form the cascode transistor circuit. A control and protection circuit (14) is integrated into the integrated circuit together and a storage capacitor (C1)provides an energy source to drive the control and protection circuit (14). A charging circuit (D1, D2) is also integrated into the integrated circuit for charging the storage capacitor (C1).</p>
申请公布号 EP2736170(B1) 申请公布日期 2015.06.17
申请号 EP20120194065 申请日期 2012.11.23
申请人 NXP B.V. 发明人 PANSIER, FRANS
分类号 H03K17/082;H03K17/10;H03K17/567 主分类号 H03K17/082
代理机构 代理人
主权项
地址