发明名称 Multilayer electronic device having one or more barrier stacks
摘要 A device includes an organic polymer layer and an electrode positioned against the polymer layer, the electrode being constituted by a transparent stack of thin layers including an alternation of n thin metallic layers and of (n+1) antireflection coatings, with n≧1, where each thin metallic layer is placed between two antireflection coatings. At least one of the two antireflection coatings located at the ends of the constituent stack of the electrode includes a stack that is a barrier to moisture and gases, the layers of the or each barrier stack having alternately lower and higher densities.
申请公布号 US9059425(B2) 申请公布日期 2015.06.16
申请号 US201214110233 申请日期 2012.04.06
申请人 SAINT-GOBAIN GLASS FRANCE 发明人 Thoumazet Claire;Python Martin;Leyder Charles
分类号 H01L51/52;H01L51/44;H01L31/0216;H01L31/0224;H01L31/048 主分类号 H01L51/52
代理机构 Pillsbury Winthrop Shaw Pittman LLP 代理人 Pillsbury Winthrop Shaw Pittman LLP
主权项 1. A multilayer electronic device, comprising: an organic polymer layer; an electrode positioned against the organic polymer layer, the electrode being constituted by a transparent stack of thin layers comprising an alternation of n thin metallic layers and of (n+1) antireflection coatings, with n≧1, where each thin metallic layer is placed between two antireflection coatings, wherein the electrode comprises: a first barrier stack, which is a barrier to moisture and to gases, in the end antireflection coating which is placed under the n thin metallic layers in the direction of deposition of the constituent stack of the electrode, the first barrier stack comprising at least four layers having alternately lower and higher densities, and/or a second barrier stack, which is a barrier to moisture and to gases, in the end antireflection coating which is placed on top of the n thin metallic layers in the direction of deposition of the constituent stack of the electrode, the second barrier stack comprising at least three layers having alternately lower and higher densities.
地址 Courbevoie FR