发明名称 Solid state lighting devices with low contact resistance and methods of manufacturing
摘要 Solid state lighting (“SSL”) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a contact on one of the first or second semiconductor materials. The contact includes a first conductive material and a plurality of contact elements in contact with one of the first or second conductive materials. The contact elements individually include a portion of a second conductive material that is different from the first conductive material.
申请公布号 US9059377(B2) 申请公布日期 2015.06.16
申请号 US201314028784 申请日期 2013.09.17
申请人 Micron Technology, Inc. 发明人 Schubert Martin F.
分类号 H01L33/38;H01L33/40;H01L33/42;H01L21/02 主分类号 H01L33/38
代理机构 Perkins Coie LLP 代理人 Perkins Coie LLP
主权项 1. A solid state lighting (SSL) device, comprising: a first semiconductor material; a second semiconductor material spaced apart from the first semiconductor material; an active region between the first and second semiconductor materials; and a contact on one of the first and second semiconductor materials, the contact including a first material that is transparent and conductive, a second material that includes silver in contact with both the first material and the one of the first and second semiconductor materials, and a support material between the first material and the first semiconductor material, wherein the support material is transparent and conductive,the support material has a first support surface in contact with the first semiconductor material and a second support surface in contact with the first material,the support material has a plurality of apertures extending between the first and second support surfaces,the apertures individually contain a portion of the second material, andthe second material forms an Ohmic contact with the first material, the support material, and the one of the first and second semiconductor materials.
地址 Boise ID US