发明名称 |
Junction butting on SOI by raised epitaxial structure and method |
摘要 |
A method of forming a semiconductor device including forming well trenches on opposing sides of a gate structure by removing portions of a semiconductor on insulator (SOI) layer of an semiconductor on insulator (SOI) substrate, wherein the base of the well trenches is provided by a surface of a buried dielectric layer of the SOI substrate and sidewalls of the well trenches are provided by a remaining portion of the SOI layer. Forming a dielectric fill material at the base of the well trenches, wherein the dielectric fill material is in contact with the sidewalls of the well trenches and at least a portion of the surface of the buried dielectric layer that provides the base of the well trenches. Forming a source region and a drain region in the well trenches with an in-situ doped epitaxial semiconductor material. |
申请公布号 |
US9059248(B2) |
申请公布日期 |
2015.06.16 |
申请号 |
US201213369382 |
申请日期 |
2012.02.09 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Ervin Joseph;Cheng Kangguo;Pei Chengwen;Wang Geng |
分类号 |
H01L21/336;H01L21/8234;H01L21/762;H01L21/84;H01L27/12 |
主分类号 |
H01L21/336 |
代理机构 |
Scully, Scott, Murphy & Presser, P.C. |
代理人 |
Scully, Scott, Murphy & Presser, P.C. ;Schnurmann H. Daniel |
主权项 |
1. A method of forming a semiconductor device comprising:
forming well trenches on opposing sides of a gate structure by removing portions of a semiconductor on insulator (SOI) layer of an semiconductor on insulator (SOI) substrate, wherein the base of the well trenches is provided by a surface of a buried dielectric layer of the SOI substrate and sidewalls of the well trenches are provided by a remaining portion of the SOI layer; forming a dielectric fill material at the base of the well trenches, wherein the dielectric fill material is in contact with the sidewalls of the well trenches and at least a portion of the surface of the buried dielectric layer that provides the base of the well trenches; and forming a source region and a drain region in the well trenches with an in-situ doped epitaxial semiconductor material. |
地址 |
Armonk NY US |