发明名称 Electrical fuse and method of making
摘要 A semiconductor fuse and methods of making the same. The fuse includes a fuse element and a compressive stress liner that reduces the electro-migration resistance of the fuse element. The method includes forming a substrate, forming a trench feature in the substrate, depositing fuse material in the trench feature, depositing compressive stress liner material over the fuse material, and patterning the compressive stress liner material.
申请公布号 US9059171(B2) 申请公布日期 2015.06.16
申请号 US201313919401 申请日期 2013.06.17
申请人 International Business Machines Corporation 发明人 Yang Chih-Chao;Yang Haining S.
分类号 H01L23/525 主分类号 H01L23/525
代理机构 Roberts Mlotkowski Safran & Cole, P.C. 代理人 Steinberg William;Roberts Mlotkowski Safran & Cole, P.C.
主权项 1. A semiconductor device, comprising: a fuse element comprising a neck extending between first and second contact portions; a compressive stress material that reduces an electro-migration resistance of the fuse element, wherein the compressive stress material comprises a compressive stress component imparted during deposition, and wherein the compressive stress material directly contacts the neck and the first and second contact portions; and a second material atop the compressive stress material.
地址 Armonk NY US