发明名称 |
Electrical fuse and method of making |
摘要 |
A semiconductor fuse and methods of making the same. The fuse includes a fuse element and a compressive stress liner that reduces the electro-migration resistance of the fuse element. The method includes forming a substrate, forming a trench feature in the substrate, depositing fuse material in the trench feature, depositing compressive stress liner material over the fuse material, and patterning the compressive stress liner material. |
申请公布号 |
US9059171(B2) |
申请公布日期 |
2015.06.16 |
申请号 |
US201313919401 |
申请日期 |
2013.06.17 |
申请人 |
International Business Machines Corporation |
发明人 |
Yang Chih-Chao;Yang Haining S. |
分类号 |
H01L23/525 |
主分类号 |
H01L23/525 |
代理机构 |
Roberts Mlotkowski Safran & Cole, P.C. |
代理人 |
Steinberg William;Roberts Mlotkowski Safran & Cole, P.C. |
主权项 |
1. A semiconductor device, comprising:
a fuse element comprising a neck extending between first and second contact portions; a compressive stress material that reduces an electro-migration resistance of the fuse element, wherein the compressive stress material comprises a compressive stress component imparted during deposition, and wherein the compressive stress material directly contacts the neck and the first and second contact portions; and a second material atop the compressive stress material. |
地址 |
Armonk NY US |