| 发明名称 | Etch with pulsed bias | ||
| 摘要 | A method for etching features into an etch layer through a patterned mask in a plasma processing chamber is provided. A main etch gas is flowed into the plasma processing chamber. The main etch gas is formed into a main etch plasma. A bias greater than 600 volts is provided. The bias is pulsed at a frequency between 1 Hz and 20 kHz with a duty cycle less than 45%. | ||
| 申请公布号 | US9059116(B2) | 申请公布日期 | 2015.06.16 |
| 申请号 | US201113252813 | 申请日期 | 2011.10.04 |
| 申请人 | Lam Research Corporation | 发明人 | Jain Amit;Fu Qian;Lee Wonchul |
| 分类号 | B44C1/22;H01L21/311;H01L21/302;H01L21/3213 | 主分类号 | B44C1/22 |
| 代理机构 | Beyer Law Group LLP | 代理人 | Beyer Law Group LLP |
| 主权项 | 1. A method for etching features into an etch layer through a patterned mask in a plasma processing chamber, wherein the etch layer is a conductive material, comprising: flowing a main etch gas into the plasma processing chamber; forming the main etch gas into a main etch plasma; providing a bias greater than 600 volts; and pulsing the bias at a frequency between 1 Hz and 20 kHz with a duty cycle less than 45%, wherein the features have a width of no more than 25 nm. | ||
| 地址 | Fremont CA US | ||