Semiconductor device and driving method thereof

摘要

A data saving period control circuit; a power gating control circuit; and a data processing circuit including a general-purpose register, an error correction code storage register, and an error correction code circuit are included. The general-purpose register and the error correction code storage register each include a volatile memory unit and a nonvolatile memory unit. The data saving period control circuit is a circuit for changing a length of a data saving period in which data output from the power gating control circuit is saved from the volatile memory unit to the nonvolatile memory unit included in the general-purpose register, depending on whether an error in an error correction code stored in the error correction code storage register is detected by the error correction code circuit.

主权项

1. A semiconductor device comprising:
a first circuit; a second circuit electrically connected to the first circuit; and a third circuit comprising:
a first register electrically connected to the second circuit, the first register comprising a first volatile memory unit and a first nonvolatile memory unit;a second register electrically connected to the second circuit, the second register comprising a second volatile memory unit and a second nonvolatile memory unit; and a fourth circuit electrically connected to the first circuit, the first register and the second register, wherein the first nonvolatile memory unit is configured to save a data from the first volatile memory unit during a data saving period, wherein the second circuit is configured to determine a length of the data saving period, wherein the fourth circuit is configured to send a first signal to the first circuit, and wherein the first circuit is configured to send a second signal to the second circuit to change the length of the data saving period on the basis of the first signal.