发明名称 |
Sensing device, power reception device, power transmission device, non-contact power transmission system, and sensing method |
摘要 |
There is provided a sensing device including a circuit including at least a coil electromagnetically coupled to an outside; a temperature detection unit for detecting a temperature of the coil; a sensing unit for measuring a Q value of the circuit; and a correction unit for correcting the Q value measured by the sensing unit based on temperature information detected by the temperature detection unit. |
申请公布号 |
US9057753(B2) |
申请公布日期 |
2015.06.16 |
申请号 |
US201213600741 |
申请日期 |
2012.08.31 |
申请人 |
SONY CORPORATION |
发明人 |
Nakano Hiroaki;Murakami Tomomichi;Kozakai Osamu;Fujimaki Kenichi |
分类号 |
G01R27/28;G01R31/06;G01R31/42;H02J5/00 |
主分类号 |
G01R27/28 |
代理机构 |
Dentons US LLP |
代理人 |
Dentons US LLP |
主权项 |
1. A sensing device comprising:
a circuit including a coil that can be electromagnetically coupled to another coil outside of the circuit and a capacitor coupled in series with the coil; a temperature measuring unit that measures a temperature of the coil; a sensing unit that measures a measured Q value of the circuit across the capacitor; a correction unit that generates a temperature-corrected measured Q value using the temperature measured by the temperature measuring unit; and a determination unit that compares the temperature-corrected measured Q value with a threshold Q value and determines the presence or absence of a metallic foreign material sufficiently proximate the sensing unit, wherein,
the threshold Q value is either (a) a predetermined Q value corresponding to a Q value for the circuit when the metallic foreign material is not sufficiently proximate the sensing unit to affect the measured Q value or (b) a temperature-corrected predetermined Q value corresponding to the Q value for the circuit when the metallic foreign material is not sufficiently proximate the sensing unit to affect the measured Q value as corrected for coil temperature. |
地址 |
Tokyo JP |