SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

In a method of manufacturing a semiconductor device, a device separator is formed on the upper part of a substrate to define an active pattern. An interlayer insulation film is formed between the active pattern and the device separator. A first recess is formed by partially eliminating the interlayer insulation film, the active pattern, and the device separator. A first contact is formed on the active pattern exposed by the first recess. A bit line extended in the first direction parallel to the upper surface of the substrate is formed on the first contact and the interlayer insulation film. The first recess expanded by partially eliminating the active pattern and the device separator is formed through an isotropic etching process. A first spacer burying the expanded first recess surrounding a sidewall of the first contact is formed. Multiple second spacers surrounding the side wall of the bit line are formed.