| 摘要 |
<p>The present invention relates to a method of growing crystals of silicon carbide, which uses a solution method and a crucible which consists mainly of SiC as an accommodating unit of Si-C solution. According to the present invention, the SiC crucible can be heated to form a temperature distribution in which a constant temperature curve is bulged more downward in the crucible; Si and C, which are generated from SiC (the main component of the crucible), can be dissolved in Si-C solution to inhibit precipitation of SiC polycrystals on the surface of the crucible which can come into contact with Si-C solution. Si-C solution under such conditions can be come into contact with SiC seed crystals from an upper portion of the crucible to grow SiC single crystals on the SiC seed crystals. Also, by using a crucible mainly consisting of SiC, changes in the composition of Si-C solution is smaller, and the generation of polycrystals, which are precipitated on the inner surface of a cruciblem or of metal carbonized materials, which can be formed by combination of an added metal element M and carbon (C), are inhibited.</p> |
