| 摘要 |
一种用于制造氮化镓材料的方法，包含该等步骤：a)提供一基材b)于该基材上形成一过渡层，该过渡层系组分性分级使得该过渡层在其深度(z)处的Al浓度系该深度之函数f(z)；及c)在该过渡层上形成一层氮化镓材料；其中在步骤中生长之该过渡层的该Al分级函数f(z)连续变化。; b) forming a transition layer over the substrate, the transition layer being compositionally graded such that the Al concentration of the transition layer at a depth (z) thereof is a function f(z) of that depth; and c) forming a layer of gallium nitride material over the transition layer; wherein the Al grading function f(z) of the transition layer grown in step varies continuously. |
