| 发明名称 |
Integrated circuit having improved radiation immunity |
| 摘要 |
An integrated circuit having improved radiation immunity is described. The integrated circuit comprises a substrate; an n-well formed on the substrate; a p-well formed on the substrate; and a p-tap formed in the p-well adjacent to the n-well, wherein the p-tap extends between circuit elements formed in the n-well and circuit elements formed in the p-well, and is coupled to a ground potential. A method of forming an integrated circuit having improved radiation immunity is also described. |
| 申请公布号 |
US9058853(B2) |
申请公布日期 |
2015.06.16 |
| 申请号 |
US201213587823 |
申请日期 |
2012.08.16 |
| 申请人 |
XILINX, INC. |
发明人 |
Hart Michael J.;Karp James |
| 分类号 |
H01L27/11;G11C5/00;G11C11/412;H01L21/8238;H01L27/02;H03K19/003;H01L27/092 |
主分类号 |
H01L27/11 |
| 代理机构 |
|
代理人 |
King John J. |
| 主权项 |
1. An integrated circuit having improved radiation immunity, the integrated circuit comprising:
a substrate; an n-well formed on the substrate; a p-well formed on the substrate and extending along the n-well, wherein the integrated circuit comprises a plurality of memory cells having n-channel transistors in the p-well and p-channel transistors in the n-well and extending in a column along the p-well and n-well; and a p-tap formed in the p-well adjacent to the n-well, wherein the p-tap extends along the column of memory cells between the p-channel transistors formed in the n-well and the n-channel transistors formed in the p-well and is coupled to a ground potential. |
| 地址 |
San Jose CA US |
