发明名称 |
System and method for leakage estimation for standard integrated circuit cells with shared polycrystalline silicon-on-oxide definition-edge (PODE) |
摘要 |
A system and method of producing an integrated circuit using abutted cells having shared polycrystalline silicon on an oxide definition region edge (PODE) includes modeling inter-cell leakage current in a plurality of different cells. Each of the plurality of different cells is abutted with another cell and having the shared PODE. The method also comprises verifying a pre-determined acceptable power consumption of the integrated circuit based on the inter-cell leakage current. |
申请公布号 |
US9058462(B2) |
申请公布日期 |
2015.06.16 |
申请号 |
US201314015846 |
申请日期 |
2013.08.30 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Tam King-Ho;Chang Yeh-Chi;Yang Kuo-Nan;Jiang Zhe-Wei;Wang Chung-Hsing |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
Lowe Hauptman & Ham, LLP |
代理人 |
Lowe Hauptman & Ham, LLP |
主权项 |
1. A method of producing an integrated circuit using abutted cells having shared polycrystalline silicon on an oxide definition region edge (PODE), comprising:
modeling, by a processor, inter-cell leakage current in a plurality of different cells, each of the plurality of different cells abutted with another cell and having the shared PODE; and verifying a pre-determined acceptable power consumption of the integrated circuit based on the inter-cell leakage current. |
地址 |
TW |