Silicon carbide epitaxial substrate and method of manufacturing silicon carbide epitaxial substrate

摘要

A silicon carbide epitaxial substrate having a main surface (second main surface) includes: a base substrate; and a silicon carbide epitaxial layer formed on the base substrate and including the main surface (second main surface), the second main surface having a surface roughness of 0.6 nm or less, a ratio of standard deviation of a nitrogen concentration in the silicon carbide epitaxial layer at a surface layer including the main surface (second main surface) within a plane of the silicon carbide epitaxial substrate to an average value of the nitrogen concentration in the silicon carbide epitaxial layer at the surface layer within the plane of the silicon carbide epitaxial substrate being 15% or less.

主权项

1. A method of manufacturing a silicon carbide epitaxial substrate, comprising the steps of:
preparing a base substrate; placing said base substrate in a silicon carbide growth device; and forming a silicon carbide epitaxial layer on said base substrate by supplying said base substrate with a source material gas used to form said silicon carbide epitaxial layer and heating said base substrate to an epitaxial growth temperature, said silicon carbide growth device including a member having a coating that is exposed to said source material gas and that is heated to said epitaxial growth temperature, wherein the member includes a substrate holder supporting the base substrate, a heat generator positioned around the substrate holder, and the coating on the substrate holder and the heat generator, wherein a nitrogen concentration of the substrate holder, the heat generator, and the coating is 10 ppm or less.