凹部之充塡方法及处理装置;DEPRESSION FILLING METHOD AND PROCESSING APPARATUS

摘要

本发明提供一种凹部之充填方法及处理装置，该凹部之充填方法，充填被处理体的凹部，该被处理体，具有半导体基板及设置于该半导体基板上之绝缘膜，该凹部，贯通该绝缘膜而延伸至该半导体基板为止，而该方法包含如下步骤：沿着区隔该凹部之壁面而形成半导体材料的薄膜之步骤；将该被处理体退火，藉由将该被处理体退火，而使该薄膜之半导体材料朝向该凹部的底部移动，形成取决于该半导体基板之结晶的磊晶区域之步骤；以及蚀刻该薄膜之步骤。; annealing the workpiece to cause the semiconductor material of the thin film to move toward a bottom of the depression and to form an epitaxial region corresponding to crystals of the semiconductor substrate; and etching the thin film.