控制离子束的装置及方法及离子植入机;APPARATUS AND METHOD TO CONTROL ION BEAM AND ION IMPLANTER
摘要
用来控制离子束的装置包括:扫描器,经配置于第一状态以扫描离子束,其中扫描器输出作为发散离子束的离子束;准直器,经配置以沿着准直器的一侧接收发散离子束及输出作为准直离子束的发散离子束;束调整构件,延伸接近准直器的所述侧;以及控制器,在扫描器处于第一状态时经配置以传送第一讯号到束调整构件,以将发散离子束的离子轨迹从第一组轨迹调整成第二组轨迹。; a collimator configured to receive along a side of the collimator the diverging ion beam and to output the diverging ion beam as a collimated ion beam; a beam adjustment component that extends proximate the side of the collimator; and a controller configured to send a first signal when the scanner is in the first state to the beam adjustment component to adjust ion trajectories of the diverging ion beam from a first set of trajectories to a second set of trajectories.
申请公布号
TW201523686
申请公布日期
2015.06.16
申请号
TW103136081
申请日期
2014.10.20
申请人
瓦里安半导体设备公司 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
发明人
波什 肯尼士H PURSER, KENNETH H.;坎贝尔 克里斯多夫 CAMPBELL, CHRISTOPHER;辛克莱 法兰克 SINCLAIR, FRANK;林德柏格 罗伯特C LINDBERG, ROBERT C.;欧尔森 约瑟C OLSON, JOSEPH C.