| 主权项 |
1. A through silicon via (TSV) bidirectional repair circuit of a semiconductor apparatus, comprising:
a first chip and a second chip, wherein the first chip and the second chip are stacked on top of each other; a first bidirectional switch and a second bidirectional switch respectively disposed on the first chip and the second chip, wherein the first bidirectional switch and the second bidirectional switch respectively receive a switch signal and an opposite switch signal as to determine whether to transmit an input signal of the first chip or the second chip to an output terminal; at least two transmission path modules, wherein each of the transmission path modules has two terminals respectively connected to the output terminals of the first bidirectional switch and the second bidirectional switch, and each of the transmission path modules comprises at least one through silicon via (TSV); and a first output logical circuit and a second output logical circuit respectively disposed on the second chip and the first chip, wherein input terminals of the first output logical circuit and the second output logical circuit are respectively connected to a second terminal and a first terminal of the at least one TSV to respectively receive at least two first transmission signals and at least two second transmission signals, so as to respectively generate a first output signal and a second output signal, wherein, each of the transmission path modules comprises: the at least one TSV, wherein each of the at least one TSV passes through a silicon substrate to transmit signals between the first chip and the second chip to each other; a first data path circuit and a second data path circuit respectively disposed on the first chip and the second chip, wherein input terminals of the first data path circuit and the second data path circuit are respectively connected to the output terminals of the first bidirectional switch and the second bidirectional switch to receive the input signal of the first chip or the second chip, and output terminals of the first data path circuit and the second data path circuit are respectively connected to the first terminal and the second terminal of the at least one TSV to transmit data through the at least one TSV according to one of the switch signal and the opposite switch signal; and wherein, the first data path circuit and the second data path circuit respectively comprise:
an input driving circuit to receive the input signal, convert the input signal into a pending signal according to a first level voltage and a second level voltage, and transmit the pending signal to a corresponding terminal of the at least one TSV;a short-circuit detection circuit connected to the corresponding terminal of the at least one TSV to detect whether short-circuit on the at least one of TSV and the silicon substrate is present according to the input signal, a level of the corresponding terminal of the at least one TSV and one of the opposite switch signal and the switch signal and generate a short-circuit detection output signal; anda leakage current cancellation circuit connected to the short-circuit detection circuit and the input driving circuit to avoid a leakage current generated by the first level voltage to flow into the silicon substrate according to the short-circuit detection output signal. |
