发明名称 Method for manufacturing a nanostructured inorganic/organic heterojunction solar cell
摘要 Provided is a method for manufacturing a significantly high efficient solar cell having a novel structure and superior stability, and which can be mass-produced from an inexpensive material from an inexpensive material for enabling the easy commercial availability thereof. More particularly, the method of the present invention comprises the following step: (a) depositing slurry containing metal oxide particles and heat-treating the slurry to form a porous electron transporting layer; (b) forming inorganic semiconductors on surfaces of the metal oxide particles for the porous electron-transporting layer; and (c) impregnating the porous electron-transporting layer having the inorganic semiconductor formed thereon with a solution containing an organic photovoltaic material so as to form a hole transporting layer.
申请公布号 US9059418(B2) 申请公布日期 2015.06.16
申请号 US201113580008 申请日期 2011.02.18
申请人 Korea Research Institute of Chemical Technology 发明人 Seok Sang Il;Im Sang Hyuk;Chang Jeong Ah;Rhee Jae Hui;Lee Yong Hui;Kim Hi Jung
分类号 H01L21/00;H01L51/40;H01L51/42;H01L51/00 主分类号 H01L21/00
代理机构 The Webb Law Firm 代理人 The Webb Law Firm
主权项 1. A method of manufacturing a solar cell comprising the steps of: a) applying slurry containing TiO2 particles and heat-treating the applied slurry to form a porous electron transporting layer; b) forming Sb2S3 which is an inorganic semiconductor type sensitizer on a surface of the TiO2 particles of the porous electron transporting layer using a chemical bath deposition method; and c) applying a solution containing P3HT [poly(3-hexylthiophene)] which is an organic photovoltaic material to the porous electron transporting layer formed with the inorganic semiconductor type sensitizer to form a hole transporting layer, wherein the pores of the porous electron transporting layer are filled with the P3HT, and the applied P3HT and the inorganic semiconductor type sensitizer contact each other, and wherein the hole transporting layer has a LUMO level higher than an Ec level which is the lowest energy level of the conduction band of the inorganic semiconductor type sensitizer, so that the photoelectron generated in the hole transporting layer spontaneously moves to the inorganic semiconductor type sensitizer.
地址 Daejeon KR