| 发明名称 | Silicon-on-insulator heat sink | ||
| 摘要 | An approach for sinking heat from a transistor is provided. A method includes forming a substrate contact extending from a first portion of a silicon-on-insulator (SOI) island to a substrate. The method also includes forming a transistor in a second portion of the SOI island. The method further includes electrically isolating the substrate contact from the transistor by doping the first portion of the SOI island. | ||
| 申请公布号 | US9059269(B2) | 申请公布日期 | 2015.06.16 |
| 申请号 | US201313738532 | 申请日期 | 2013.01.10 |
| 申请人 | International Business Machines Corporation | 发明人 | Botula Alan B.;Joseph Alvin J.;Slinkman James A.;Wolf Randy L. |
| 分类号 | H01L21/339;H01L23/48;H01L27/12;H01L29/78;H01L29/66 | 主分类号 | H01L21/339 |
| 代理机构 | Roberts Mlotkowski Safran & Cole, P.C. | 代理人 | LeStrange Michael;Roberts Mlotkowski Safran & Cole, P.C. |
| 主权项 | 1. A method of manufacturing a semiconductor structure, comprising: forming a substrate contact extending from a first portion of a silicon-on-insulator (SOI) island to a substrate; forming a transistor in a second portion of the SOI island; and electrically isolating the substrate contact from the transistor by doping the first portion of the SOI island, wherein the doping the first portion of the SOI island comprises an ion implantation process that also dopes an upper portion of the substrate contact. | ||
| 地址 | Armonk NY US | ||