Applying a bias signal to memory cells to reverse a resistance shift of the memory cells

摘要

Data is written to cells of a resistance-based, non-volatile memory. An activity metric is tracked since the writing of the data to the cells. In response to the activity metric satisfying a threshold, a bias signal is applied to the cells to reverse a resistance shift of the cells.

主权项

1. A method comprising:
writing data to cells of a resistance-based, non-volatile memory; tracking an activity metric since the writing of the data to the cells; tracking a second activity metric of neighboring cells; in response to the activity metric satisfying a threshold, applying a bias signal to the cells to reverse a resistance shift of the cells; and in response to the second activity metric of the neighboring cells, modifying at least one of the threshold and an amount of the bias signal.