| 发明名称 | Methods of transferring graphene and manufacturing device using the same | ||
| 摘要 | A method of transferring graphene includes forming a sacrificial layer and a graphene layer sequentially on a first substrate, bonding the graphene layer to a target layer, and removing the sacrificial layer using a laser and separating the first substrate from the graphene layer. | ||
| 申请公布号 | US9056424(B2) | 申请公布日期 | 2015.06.16 |
| 申请号 | US201313918066 | 申请日期 | 2013.06.14 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Wenxu Xianyu;Lee Jeong-yub;Moon Chang-youl;Park Yong-young;Yang Woo-young;Kim Yong-sung;Lee Joo-ho |
| 分类号 | B44C1/17;B29C65/16;B32B37/26;B32B38/10;B32B43/00;B29C67/24;H01L51/00;H01L51/10;H01L51/44 | 主分类号 | B44C1/17 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A method of transferring graphene, the method comprising: forming a sacrificial layer and a graphene layer sequentially on a first substrate; bonding the graphene layer to a target layer; and removing the sacrificial layer using a laser to separate the first substrate from the graphene layer, wherein the removing entirely removes the sacrificial layer. | ||
| 地址 | Gyeonggi-do KR | ||