| 发明名称 | Method for fabricating semiconductor device | ||
| 摘要 | A semiconductor device includes a dielectric layer in which zirconium, hafnium, and a IV group element are mixed. A method for fabricating a capacitor includes forming a bottom electrode, forming the dielectric layer and forming a top electrode over the dielectric layer. | ||
| 申请公布号 | US9058984(B2) | 申请公布日期 | 2015.06.16 |
| 申请号 | US201414268576 | 申请日期 | 2014.05.02 |
| 申请人 | SK Hynix Inc. | 发明人 | Lee Kee-Jeung;Hong Kwon;Park Kyung-Woong;Ahn Ji-Hoon |
| 分类号 | H01L29/72;H01L21/02;C23C16/04;C23C16/455;C23C16/56;H01L49/02;H01L27/108 | 主分类号 | H01L29/72 |
| 代理机构 | IP & T Group LLP | 代理人 | IP & T Group LLP |
| 主权项 | 1. A method for fabricating a semiconductor device, comprising: forming a dielectric layer in which zirconium, hafnium, and a IV group element are mixed, wherein the dielectric layer includes a ZrHfCeO layer and has a dielectric constant of 50 to 60. | ||
| 地址 | Gyeonggi-do KR | ||