发明名称 |
Resistance-variable element and method for manufacturing the same |
摘要 |
A resistance-variable element as disclosed has high reliability, high densification, and good insulating properties. The device provides a resistance-variable element in which a first electrode including a metal primarily containing copper, an oxide film of valve-metal, an ion-conductive layer containing oxygen and a second electrode are laminated in this order. |
申请公布号 |
US9059402(B2) |
申请公布日期 |
2015.06.16 |
申请号 |
US201013380092 |
申请日期 |
2010.06.21 |
申请人 |
NEC CORPORATION |
发明人 |
Tada Munehiro;Sakamoto Toshitsugu;Yabe Yuko;Saito Yukishige;Hada Hiromitsu |
分类号 |
H01L45/00;G11C13/00 |
主分类号 |
H01L45/00 |
代理机构 |
Young & Thompson |
代理人 |
Young & Thompson |
主权项 |
1. A method for manufacturing a resistance-variable element comprising the steps of:
forming a first electrode comprising copper; forming a valve-metal film on the first electrode; forming an ion-conductive layer on the valve-metal film with a gas containing oxygen, wherein the valve-metal film is oxidized to become an oxide film of valve-metal during the step of forming the ion-conductive layer; and after the step of forming the ion-conductive layer on the valve-metal film wherein the valve-metal film is oxidized to become the oxide film of valve-metal, forming a second electrode on the ion-conductive layer. |
地址 |
Tokyo JP |