发明名称 Solar cell using p-i-n nanowire
摘要 A solar cell using a p-i-n nanowire that may generate light by absorbing solar light in a wide wavelength region efficiently without generating light loss and may be manufactured with a simplified process and low cost. The solar cell includes: a semiconductor layer formed of a semiconductor material; and a photoelectromotive layer including a semiconductor structure including a core-nanowire that extends long in an upward direction of the semiconductor layer and is formed of an intrinsic semiconductor material, and a shell-nanowire that is formed to surround a periphery of the core-nanowire and is formed of a semiconductor material, wherein the semiconductor material that is used for forming the semiconductor layer includes an n-type semiconductor material, or the semiconductor material that is used for forming the shell-nanowire includes a p-type semiconductor material, and the semiconductor material that is used for forming the semiconductor layer includes a p-type semiconductor material, and the semiconductor material that is used for forming the shell-nanowire includes an n-type semiconductor material.
申请公布号 US9059345(B2) 申请公布日期 2015.06.16
申请号 US201013382134 申请日期 2010.07.06
申请人 INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY 发明人 Kim Tae-Whan;You Joo-Hyung;Jung Jae-Hun;Yi Jae-Seok;Park Won-Il
分类号 H01L31/0352 主分类号 H01L31/0352
代理机构 William Park & Associates Ltd. 代理人 William Park & Associates Ltd.
主权项 1. A solar cell comprising: a semiconductor layer formed of a semiconductor material; and a photoelectromotive layer comprising a semiconductor structure comprising a core-nanowire that extends long in an upward direction of the semiconductor layer and is formed of an intrinsic semiconductor material, and a shell-nanowire that is formed to surround a periphery of the core-nanowire and is formed of a semiconductor material, wherein the semiconductor material that is used for forming the semiconductor layer comprises an n-type semiconductor material, and the semiconductor material that is used for forming the shell-nanowire comprises a p-type semiconductor material, or the semiconductor material that is used for forming the semiconductor layer comprises a p-type semiconductor material, and the semiconductor material that is used for forming the shell-nanowire comprises an n-type semiconductor material.
地址 Seoul KR