发明名称 |
Solar cell using p-i-n nanowire |
摘要 |
A solar cell using a p-i-n nanowire that may generate light by absorbing solar light in a wide wavelength region efficiently without generating light loss and may be manufactured with a simplified process and low cost. The solar cell includes: a semiconductor layer formed of a semiconductor material; and a photoelectromotive layer including a semiconductor structure including a core-nanowire that extends long in an upward direction of the semiconductor layer and is formed of an intrinsic semiconductor material, and a shell-nanowire that is formed to surround a periphery of the core-nanowire and is formed of a semiconductor material, wherein the semiconductor material that is used for forming the semiconductor layer includes an n-type semiconductor material, or the semiconductor material that is used for forming the shell-nanowire includes a p-type semiconductor material, and the semiconductor material that is used for forming the semiconductor layer includes a p-type semiconductor material, and the semiconductor material that is used for forming the shell-nanowire includes an n-type semiconductor material. |
申请公布号 |
US9059345(B2) |
申请公布日期 |
2015.06.16 |
申请号 |
US201013382134 |
申请日期 |
2010.07.06 |
申请人 |
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY |
发明人 |
Kim Tae-Whan;You Joo-Hyung;Jung Jae-Hun;Yi Jae-Seok;Park Won-Il |
分类号 |
H01L31/0352 |
主分类号 |
H01L31/0352 |
代理机构 |
William Park & Associates Ltd. |
代理人 |
William Park & Associates Ltd. |
主权项 |
1. A solar cell comprising:
a semiconductor layer formed of a semiconductor material; and a photoelectromotive layer comprising a semiconductor structure comprising a core-nanowire that extends long in an upward direction of the semiconductor layer and is formed of an intrinsic semiconductor material, and a shell-nanowire that is formed to surround a periphery of the core-nanowire and is formed of a semiconductor material, wherein the semiconductor material that is used for forming the semiconductor layer comprises an n-type semiconductor material, and the semiconductor material that is used for forming the shell-nanowire comprises a p-type semiconductor material, or the semiconductor material that is used for forming the semiconductor layer comprises a p-type semiconductor material, and the semiconductor material that is used for forming the shell-nanowire comprises an n-type semiconductor material. |
地址 |
Seoul KR |