| 发明名称 | Bi-directional silicon controlled rectifier structure | ||
| 摘要 | Fabrication methods for bi-directional silicon controlled rectifier device structures. A well of a first conductivity type is formed in a device region, which may be defined from a device layer of a semiconductor-on-insulator substrate. An anode of a first silicon controlled rectifier is formed in the first well. A cathode of a second silicon controlled rectifier is formed in the first well. The anode of the first silicon controlled rectifier has the first conductivity type. The cathode of the second silicon controlled rectifier has a second conductivity type opposite to the first conductivity type. | ||
| 申请公布号 | US9059198(B2) | 申请公布日期 | 2015.06.16 |
| 申请号 | US201414492622 | 申请日期 | 2014.09.22 |
| 申请人 | International Business Machines Corporation | 发明人 | Di Sarro James P.;Gauthier, Jr. Robert J.;Li Junjun |
| 分类号 | H01L29/87;H01L29/66;H01L29/74;H01L27/02 | 主分类号 | H01L29/87 |
| 代理机构 | Wood, Herron & Evans, LLP | 代理人 | Wood, Herron & Evans, LLP ;Canale Anthony J. |
| 主权项 | 1. A method of fabricating a device structure, the method comprising: forming a first well of a first conductivity type in a device region; forming an anode of a first silicon controlled rectifier in the first well; and forming a cathode of a second silicon controlled rectifier in the first well, wherein the anode of the first silicon controlled rectifier has the first conductivity type and the cathode of the second silicon controlled rectifier has a second conductivity type opposite to the first conductivity type. | ||
| 地址 | Armonk NY US | ||