Copper interconnect with CVD liner and metallic cap

摘要

A structure having a diffusion barrier positioned adjacent to a sidewall and a bottom of an opening being etched in a layer of dielectric material. The structure also having a metal liner positioned directly on top of the diffusion barrier, a seed layer positioned directly on top of the metal liner, wherein the seed layer is made from a material comprising copper, a copper material positioned directly on top of the seed layer, a metallic cap positioned directly on top of and selective to the copper material, and a capping layer positioned directly on top of and adjacent to the metallic cap.

主权项

1. A method comprising:
depositing a diffusion barrier within an opening etched in a layer of dielectric material, wherein the opening comprises a bottom and a sidewall having a re-entrant feature; depositing a metal liner directly on top of the diffusion barrier; depositing a seed layer of copper directly on top of the metal liner; filling the opening etched in the layer of dielectric material with a copper material, wherein the copper material is deposited directly on top of the seed layer; depositing a metallic cap selective to and directly on top of the copper material; and depositing a capping layer directly on top of and adjacent to the metallic cap; wherein, the diffusion barrier, the metal liner, the seed layer, and the copper material having the re-entrant feature.