| 发明名称 | Inhibiting propagation of imperfections in semiconductor devices | ||
| 摘要 | Aspects of the disclosure provide a method of inhibiting crack propagation in a silicon wafer. In one embodiment, a method of repairing an imperfection on a surface of a semiconductor device is disclosed. The method includes: screening for imperfections on a surface of a silicon wafer of a semiconductor device; and in response to at least one imperfection on the surface of the silicon wafer, depositing a material on the surface of the silicon wafer. | ||
| 申请公布号 | US9059097(B2) | 申请公布日期 | 2015.06.16 |
| 申请号 | US201213570426 | 申请日期 | 2012.08.09 |
| 申请人 | International Business Machines Corporation | 发明人 | Ayotte Stephen P.;Hill David J.;Richard Glen E.;Sullivan Timothy M.;Truax Heather M. |
| 分类号 | H01L21/00;H01L21/469;H01L21/302;H01L23/31;H01L21/312;H01L21/3105;H01L29/34;H01L29/32;H01L21/66 | 主分类号 | H01L21/00 |
| 代理机构 | Hoffman Warnick LLC | 代理人 | Cain David A.;Hoffman Warnick LLC |
| 主权项 | 1. A method of repairing an imperfection on a surface of a semiconductor device, comprising: detecting imperfections on a surface of a silicon wafer of a semiconductor device; and in response to at least one imperfection being detected on the surface of the silicon wafer, depositing a material only within each detected imperfection, wherein the material includes an organic epoxy, the organic epoxy comprising a two-part system selected from the group consisting of: polyoxypropylenediamine, aliphatic amine, or alkyl phenol, and an epoxy resin; and nonylphenol or aminoethylpiperazine, and bisphenol A diglycidylether resin. | ||
| 地址 | Armonk NY US | ||