| 发明名称 |
Methodology and apparatus for tuning driving current of semiconductor transistors |
| 摘要 |
A method and apparatus for repairing transistors may include applying a first voltage to a source, a second voltage to the gate and a third voltage to the drain for a predetermined time. In this manner the transistor structure may be repaired or returned to operate at or near the original operating characteristics. |
| 申请公布号 |
US9059204(B2) |
申请公布日期 |
2015.06.16 |
| 申请号 |
US201414263067 |
申请日期 |
2014.04.28 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Feng Kai D.;Hostetter, Jr. J. Edwin;Wang Ping-Chuan;Yang Zhijian |
| 分类号 |
H01L21/02;H01L29/66;H01L21/326;G01R31/27;H01L29/78 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
Mathavan Parthiban A.;Steinberg William H. |
| 主权项 |
1. A method for repairing a channel region between a source and drain of a NFET comprising:
applying a first voltage to the drain of the NFET for a first predetermined time; applying a second voltage to a gate of the NFET for the first predetermined time; and applying a third voltage to the source of the NFET for the first predetermined time, wherein the first voltage is greater than the second voltage, and the second voltage is greater than the third voltage, and wherein the second voltage and the gate-to-source voltage of the NFET are each maintained at a decreased voltage level during the first predetermined time compared to a voltage level of the same prior to entering a repair mode for the first predetermined time to repair the channel region of the NFET. |
| 地址 |
Armonk NY US |
