Semiconductor device and method for manufacturing same

摘要

The objective of the present invention is to provide a semiconductor device provided with a resistance-variable element having sufficient switching property and exhibiting high reliability and high densification as well as good insulating property.;The present invention provides a semiconductor device comprising a resistance-variable element provided within multiple wiring layers on a semiconductor substrate, wherein the resistance-variable element comprises a laminated structure in which a first electrode, a first ion-conductive layer of valve-metal oxide film, a second ion-conductive layer containing oxygen and a second electrode are laminated in this order, and the wiring of the multiple wiring layers also serves as the first electrode.

主权项

1. A semiconductor device comprising:
a resistance-variable element provided within multiple wiring layers on a semiconductor substrate, the resistance-variable element comprising a first electrode which is entirely embedded in a wiring groove and also serves as a wiring of the multiple wiring layers, a first ion-conductive layer composed of an oxide film of valve-metal on the first electrode, a second ion-conductive layer containing oxygen on the first ion-conductive layer and a second electrode on the second ion-conductive layer; and an insulating barrier film formed on the first electrode, the insulating barrier film having an opening with a tapered surface that extends along and recedes from the first electrode, wherein the first ion-conductive layer is in direct physical contact with the first electrode at the opening and the first ion-conductive layer is also formed on the tapered surface, wherein the outer peripheries of the first ion-conductive layer, the second ion-conductive layer and the second electrode are arranged at a same position in the plane parallel to the semiconductor substrate, wherein the first electrode comprises copper, and wherein the oxide film of valve-metal is a titanium oxide film.