Semiconductor gate structure and method of fabricating thereof

摘要

A semiconductor gate structure is provided having a trench, the trench assembled by a dielectric structure and a stack structure. A first conductive layer may be conformally applied to the dielectric structure and the stack structure. An oxide layer is formed along the first conductive layer and may then be substantially removed from the first conductive layer. In certain gate structures, a conductive fill structure having the first conductive layer and a second conductive layer may be disposed on the stack structure and the dielectric structure.

主权项

1. A gate structure comprising:
a trench, the trench assembled by a dielectric structure and a stack structure; and a conductive fill structure disposed on the stack structure and the dielectric structure, wherein the conductive fill structure comprises two or more conductive layers, wherein the two or more conductive layers comprise a first conductive layer conformally disposed on the dielectric structure and the stack structure, and wherein the first conductive layer has a first thickness at a region adjacent to the dielectric structure and a second thickness at another region adjacent to the stack structure, wherein a ratio of the first thickness to the second thickness is in a range of from about 50% to about 95%.