Lateral heterojunction bipolar transistors

摘要

A lateral heterojunction bipolar transistor is formed on a substrate including a top semiconductor layer of a first semiconductor material having a first band gap and of a first conductivity type. A stack of an extrinsic base and a base cap is formed over the top semiconductor layer. A dielectric spacer is formed around the stack. Ion implantation of dopants of a second conductivity type is performed to dope regions of the top semiconductor layer that are not masked by the stack and the dielectric spacer, thereby forming an emitter region and a collector region. A second semiconductor material having a second band gap greater than the first band gap, having a doping of the second conductivity type and being lattice matched to the first semiconductor material is selectively deposited to form an emitter contact region and a collector contact region, respectively.

主权项

1. A semiconductor structure comprising a bipolar junction transistor (BJT), wherein said BJT comprises:
a base region comprising a first portion of a first semiconductor material having a first band gap and having a doping of a first conductivity type; an emitter region comprising a second portion of said first semiconductor material, having a doping of a second conductivity type that is the opposite of said first conductivity type, and laterally contacting said base region; and an emitter contact region comprising a portion of a second semiconductor material having a second band gap that is greater than said first band gap, having a doping of said second conductivity type, being lattice matched to the first semiconductor material and contacting said emitter region.