Semiconductor manufacturing method and semiconductor structure thereof

摘要

A semiconductor manufacturing method includes providing a carrier; forming a first photoresist layer; forming plural core portions; removing the first photoresist layer; forming a second photoresist layer; forming a plurality of connection portions, each of the plurality of connection portions includes a first connection layer and a second connection layer and connects to each of the core portions to form a hybrid bump, wherein each of the first connection layers comprises a base portion, a projecting portion and an accommodating space, each base portion comprises an upper surface, each projecting portion is protruded to the upper surface and located on top of each core portion, each accommodating space is located outside each projecting portion, the second connection layers cover the projecting portions and the upper surfaces, and the accommodating spaces are filled by the second connection layers; removing the second photoresist layer to reveal the hybrid bumps.

主权项

1. A semiconductor manufacturing method at least includes:
providing a carrier having a surface and a metallic layer formed on the surface, the metallic layer comprises a plurality of first areas and a plurality of second areas located outside the first areas; forming a first photoresist layer on the metallic layer, the first photoresist layer comprises a plurality of first openings; forming a plurality of core portions in the first openings; removing the first photoresist layer to reveal the core portions, each of the plurality of core portions comprises a top surface; forming a second photoresist layer on the metallic layer, the second photoresist layer comprises a plurality of second openings, and the top surfaces of the core portions are revealed by the second openings; forming a plurality of connection portions in the second openings, each of the plurality of connection portions includes a first connection layer and a second connection layer, each of the first connection layers is formed on the top surface of each of the core portions and the metallic layer to make each of the connection portions connected to each of the core portions to form a hybrid bump, wherein each of the first connection layers comprises a base portion, a projecting portion and an accommodating space, each of the base portions comprises an upper surface, each of the projecting portions protrudes to each of the upper surfaces, each of the projecting portions is located on top of each of the core portions, each of the accommodating spaces is located outside each of the projecting portions, the second connection layers cover the projecting portions and the upper surfaces, and the accommodating spaces are filled by the second connection layers; removing the second photoresist layer to reveal the hybrid bumps; and removing the second areas of the metallic layer to make the first areas of the metallic layer form a plurality of under bump metallurgy layers.