Microelectronic structure including air gap

摘要

A microelectronic structure and a method for fabricating the microelectronic structure provide a plurality of voids interposed between a plurality of conductor layers. The plurality of voids is also located between a liner layer and an inter-level dielectric layer. The voids provide for enhanced electrical performance of the microelectronic structure.

主权项

1. A microelectronic structure comprising:
a first dielectric layer located over a substrate; a plurality of conductor layers located embedded and planarized within the first dielectric layer and including a plurality of apertures interposed between the plurality of conductor layers; a plurality of barrier layers located upon bottom and sidewall portions of the plurality of conductor layers; a plurality of capping layers aligned upon top surfaces of the plurality of conductor layers; a plurality of spacers adjoining a sidewall of the plurality of capping layers and having a thickness less than or equal to a width of the barrier layer; a liner layer incompletely filling the plurality of apertures; and a second dielectric layer located upon the liner layer and enclosing a plurality of voids interposed between the liner layer and the second dielectric layer, and separating the plurality of conductor layers.